| PART |
Description |
Maker |
| 1N5393GP 1N5399GP 1N5391GP 1N5392GP 1N5394GP 1N539 |
Glass Passivated Junction Rectifier(????荤?缁???存???
Glass Passivated Junction Rectifier(钝化玻璃结型整流 结玻璃钝化整流（钝化玻璃结型整流器）
GLASS PASSIVATED JUNCTION RECTIFIER 玻璃钝化整流
|
GE Security, Inc.
GE[General Semiconductor]
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| 1N4001GP 1N4002GP 1N4003GP 1N4004GP |
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 50V
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 100V
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 200V
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 400V
|
Vishay
|
| FR301G FR307G FR302G FR303G FR304G FR305G FR306G F |
GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS
1000 V, 3 A, glass passivated junction fast recovery rectifier
|
EIC discrete Semiconduc...
Electronics Industry Public Company Limited
EIC[EIC discrete Semiconductors]
|
| 1N5617GP 1N5619GP 1N5615GP 1N5623GP 1N5621GP |
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0 A, Reverse Voltage 400V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0 A, Reverse Voltage 600V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0 A, Reverse Voltage 200V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0 A, Reverse Voltage 1000V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0 A, Reverse Voltage 800V
|
Vishay
|
| GL34M GL34A GL34B GL34D GL34G GL34J GL34K |
From old datasheet system
MINI-MELF glass passivated junction Diodes - Silicon passivated type
|
FORMOSA[Formosa MS]
|
| FR251G05 |
GLASS PASSIVATED JUNCTION
|
EIC discrete Semiconductors
|
| FR101G05 FR105G |
GLASS PASSIVATED JUNCTION
|
EIC discrete Semiconductors
EIC discrete Semiconduc...
|
| FR151G05 |
GLASS PASSIVATED JUNCTION
|
EIC discrete Semiconductors
|
| GN1D GN1A05 |
GLASS PASSIVATED JUNCTION
|
EIC discrete Semiconductors
|
